Method and apparatus for producing a Czochralski growth semicond

Details Method and apparatus for producing a Czochralski growth semicond Method and apparatus for producing a Czochralski growth semicond

1994-02-04

1995-05-30

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

With means for measuring, testing, or sensing

117217, 372 6, C30B 3500

Patent

active

054192773

ABSTRACT:
An apparatus for producing a semiconductor single-crystal grown by the Czochralski method includes a reference reflector disposed at the lower end of a gas rectifying tube, first and second optical systems disposed above the reference reflector for changing the direction of propagation of light from the horizontal to the vertical, and vice versa, a first position sensor composed of a first light source for emitting a light beam in a horizontal direction toward the first optical system, and a first photosensitive member which receives a reflection light reflected from the melt surface in a crucible, a second position sensor composed of a second light source for emitting a light beam in a horizontal direction toward the second optical system, and a second photosensitive member which receives a reflection light reflected from the reference reflector. With this construction, the distance between the gas rectifying tube and the melt surface can be detected and maintained constant throughout the crystal growth process with the result that the crystal quality, especially the concentration of dopant and impurities, such as oxygen and carbon, is uniform.

REFERENCES:
patent: 2979386 (1961-04-01), Shockley
patent: 3741656 (1973-06-01), Shapiro
patent: 4508970 (1985-04-01), Ackerman
patent: 5096677 (1992-03-01), Katsuoka et al.
patent: 5170061 (1992-12-01), Baba
patent: 5240684 (1993-08-01), Baba et al.

Affiliated with

Also associated with

Rating

Method and apparatus for producing a Czochralski growth semicond does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for producing a Czochralski growth semicond, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for producing a Czochralski growth semicond will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-355445