Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Reexamination Certificate
2006-08-01
2010-10-19
Vinh, Lan (Department: 1713)
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
C216S058000, C216S067000, C438S706000
Reexamination Certificate
active
07815815
ABSTRACT:
A surface processing method includes supporting a wafer in a vacuum chamber and generating a plasma in a confined portion of the chamber over only a selected portion of the wafer to thereby perform a surface processing treatment (e.g., an ashing process) on the selected portion of the wafer. While the plasma is being generated, the wafer and the confined portion of the chamber are displaced with respect to one another to thereby perform the surface processing treatment on a second selected portion of the wafer.
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Mayer & Williams PC
Mayer, Esq. Stuart H.
Sony Corporation
Sony Electronics Inc.
Vinh Lan
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