Method and apparatus for processing the peripheral and edge...

Details Method and apparatus for processing the peripheral and edge... Method and apparatus for processing the peripheral and edge...

2006-08-01

2010-10-19

Vinh, Lan (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

Etching inorganic substrate

C216S058000, C216S067000, C438S706000

Reexamination Certificate

active

07815815

ABSTRACT:
A surface processing method includes supporting a wafer in a vacuum chamber and generating a plasma in a confined portion of the chamber over only a selected portion of the wafer to thereby perform a surface processing treatment (e.g., an ashing process) on the selected portion of the wafer. While the plasma is being generated, the wafer and the confined portion of the chamber are displaced with respect to one another to thereby perform the surface processing treatment on a second selected portion of the wafer.

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