Method and apparatus for processing surface of semiconductor lay

Details Method and apparatus for processing surface of semiconductor lay Method and apparatus for processing surface of semiconductor lay

1992-03-09

1994-05-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

156643, 134 1, 437946, H01L 21306

Patent

active

053087917

ABSTRACT:
An apparatus for processing the surface of an Si wafer includes a vacuum cleaning chamber in which said Si wafer is housed. He gas is supplied into the cleaning chamber and micro-wave and magnetic field are applied to the He gas to generate excited species which emit vacuum ultraviolet. The vacuum ultraviolet is radiated onto the wafer surface to enable its energy to cut bonds between Si atoms of said wafer and O atoms and forming a natural oxide film on the wafer surface. Ar gas is also supplied into the cleaning chamber to create ions of said Ar gas due to energy added from said excited species. Said ions are supplied onto the wafer surface to form floating potential above said wafer surface. Said ions collide against said wafer surface to eliminate O atoms from said wafer surface. A process chamber is connected to the cleaning chamber through a load lock chamber. Al film is formed on the wafer surface, from which the natural oxide film has been eliminated, in the process chamber.

REFERENCES:
patent: 5024968 (1991-06-01), Engelsberg
patent: 5147465 (1992-09-01), Maruyama et al.

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