Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-04-17
2007-04-17
Font, Frank G. (Department: 2883)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492210, C250S492300
Reexamination Certificate
active
11127213
ABSTRACT:
An object of the invention is to realize a method and an apparatus for processing and observing a minute sample which can observe a section of a wafer in horizontal to vertical directions with high resolution, high accuracy and high throughput without splitting any wafer which is a sample. In an apparatus of the invention, there are included a focused ion beam optical system and an electron optical system in one vacuum container, and a minute sample containing a desired area of the sample is separated by forming processing with a charged particle beam, and there are included a manipulator for extracting the separated minute sample, and a manipulator controller for driving the manipulator independently of a wafer sample stage.
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Japanese Office Action 2000-344226.
Fukuda Muneyuki
Kashima Hideo
Koike Hidemi
Mitsui Yasuhiro
Shichi Hiroyasu
Font Frank G.
Hughes James P.
Kenyon & Kenyon LLP
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