Method and apparatus for process control of material emitting ra

Radiant energy – Invisible radiant energy responsive electric signalling – Infrared responsive

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

2503381, 25033901, 250340, 2503591, 374 9, G01N 2135, G01J 510

Patent

active

054811120

ABSTRACT:
A method and apparatus are disclosed for controlling a physical property such as deposited film thickness to a desired value of control in a high temperature process using a desired emissivity power ratio and an emissivity power ratio measured from detected radiation energy. The measured emissivity power ratio is obtained on-line from detection signals of radiation sensors. A desired value of control is converted to the desired emissivity power ratio using predetermined relationships established by theory or experiment. The desired emissivity power ratio and the measured emissivity power ratio are compared to achieve the desired value of control.

REFERENCES:
patent: 4498765 (1985-02-01), Herve 374126
Thorpe, et al., "In Situ Growth Rate Measurements During Molecular Beam Epitaxy Using an Optical Pyrometer"; Applied Physics Letters, vol. 55, No. 20, pp. 2138-2140, Nov. 1989.
F. Roozeboom, "Temperature Control and System Design Aspects in Rapid Thermal Processing"; Rapid Thermal and Integrated Processing Symposium, pp. 9-16, May 1991.
L. D. Zekovic, "Investigation of Anodic Alumina by a Photoluminescence Method: II"; Thin Solid Films, vol. 109, No. 3, pp. 217-223, Nov. 1983.
60.14108 . JP Abstract Jan. 24, 1985.
Tanaka et al., "Theory of a New Radiation Thermometry Method and a n Experimental Study Using Galvannealed Steel Specimens"; Trans. of the Soc. of Instrument and Control Engineers, vol. 25, No. 10, 1031/1037, Oct. 1989); pp. 1-7.
Makino, "Present Research on Thermal Radiation Properties and Characteristics of Materials"; International Journal of Thermophysics, vol. 11, No. 2, 1990; pp. 339-352.
Makino et al.; "Thermal Radiation Characteristics of Stainless Steels and Super-Alloys in an Oxidation Process at High Temperatures"; The Second Asian Thermophysical Properties Conference, 1989; pp. 221-226.
Tanaka et al.; "Application of Trace Method: A New Method for the Simultaneous Determination of Temperature and Two Spectral Emissivities"; UDC 536,521: 669. 14-415; pp. 63-67, (1990).
Watanabe et al.; "Radiation Thermometry of Silicon-Wafer in Semiconductor Heat-Treatment Equipment"; vol. 25, No. 9, 925/931 (1989); pp. 1-6.
Schiroky; "In Situ Measurement of Silicon Oxidation Kinetics by Monitoring Spectrally Emitted Radiation"; Joun. of Materials Science 22 (1987) pp. 3595-3601.
Colavito et al.; "Effects of External Silicon Dioxide and Surface Roughness on the Radiative Melting of Silicon"; J. Electrochem. Soc., vol. 134, No. 5, May 1987; pp. 1211-1220.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for process control of material emitting ra does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for process control of material emitting ra, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for process control of material emitting ra will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-237168

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.