Method and apparatus for preventing etch rate drop after machine

Details Method and apparatus for preventing etch rate drop after machine Method and apparatus for preventing etch rate drop after machine

1999-01-29

2000-11-28

Paschall, Mark

Electric heating

Metal heating

By arc

21912141, 21912142, 156345, 118723I, 31511151, B23K 1000

Patent

active

061538493

ABSTRACT:
An apparatus and a method for preventing etch rate drop after a machine idle time in a plasma etch chamber are disclosed. In the apparatus, an enclosure for enclosing a top plate in the plasma etch chamber is provided which is equipped with a heater in fluid communication with the enclosure. The top plate which includes a dielectric window and an inductive coil can be heated to a temperature between about 35.degree. C. and about 45.degree. C. during machine idle time to prevent etch rate drop after the chamber is restarted. The plasma etch chamber may be an inductively coupled RF plasma etcher. The heater may be constructed by a heater housing which is in fluid communication with the enclosure, at least one heating lamp in the housing, and a blower for delivering heated air into the enclosure cavity. By utilizing the present invention novel apparatus and method, etch rate can be substantially maintained even after a machine idle time and an under-etch condition can be prevented to substantially eliminate scrap of defective wafers.

REFERENCES:
patent: 5350480 (1994-09-01), Gray
patent: 5525159 (1996-06-01), Hama et al.
patent: 5690050 (1997-11-01), Doi
patent: 5783102 (1998-07-01), Keller
patent: 5846331 (1998-12-01), Miyamoto
patent: 6015465 (2000-01-01), Kholodenko et al.

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