Method and apparatus for preparing thin film

Details Method and apparatus for preparing thin film Method and apparatus for preparing thin film

2005-09-30

2010-06-01

Norton, Nadine G (Department: 1792)

Coating processes

Spraying

Organic compound containing base

C427S421100, C427S328000, C427S331000, C118S302000

Reexamination Certificate

active

07727597

ABSTRACT:
The present invention provides a method and an apparatus for preparing a silicon-containing solid film, which can form a thin film uniformly over a wide area. Raw-material fluid comprising a silane derivative and a hydrocarbon derivative is mixed with carrier fluid comprising carbon dioxide to form a supercritical condition. Further, an active-state is produced in the raw-material fluid of the supercritical fluid by a catalytic reaction with at least one metal catalyst selected from a group consisting of platinum, tungsten, cobalt, nickel, iron or an alloy of each of them. The fluid is blown to the substrate, thereby forming a silicon-containing solid film or a hydrocarbon-containing solid film on the substrate.

REFERENCES:
patent: 4603168 (1986-07-01), Sasaki et al.
patent: 5238669 (1993-08-01), Sullivan
patent: 5417953 (1995-05-01), Cappelli
patent: 2002/0090458 (2002-07-01), Cotte et al.
patent: 2004/0096586 (2004-05-01), Schulberg et al.
patent: 2004/0188778 (2004-09-01), Aoyama
patent: 2006/0068583 (2006-03-01), Kawamura et al.
patent: 2000-77342 (2000-03-01), None
patent: 2000-195801 (2000-07-01), None
patent: 2000-239846 (2000-07-01), None
patent: 2000-226624 (2000-08-01), None
patent: 2001-287910 (2001-10-01), None
patent: 2003-82463 (2003-03-01), None
patent: 2004-303894 (2004-10-01), None

Affiliated with

Also associated with

Rating

Method and apparatus for preparing thin film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for preparing thin film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for preparing thin film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4161150