Data processing: measuring – calibrating – or testing – Measurement system – Performance or efficiency evaluation
Reexamination Certificate
2005-03-29
2005-03-29
Nghiem, Michael (Department: 2863)
Data processing: measuring, calibrating, or testing
Measurement system
Performance or efficiency evaluation
Reexamination Certificate
active
06873932
ABSTRACT:
A method of predicting a lifetime of a semiconductor device at a predetermined operating condition includes performing a hot carrier injection (HCI) accelerated stress test on a plurality of MOS transistors. For each HCI test, a HCI lifetime and a maximum substrate or gate current are determined. The HCI test data is fit with a hot carrier lifetime model and fitting parameters are obtained. A wafer level test is performed on at least 10Ntransistors in which a maximum substrate or gate current is determined for each transistor. A median lifetime to failure is determined for the statistical distribution of maximum substrate or gate current values at the predetermined operating condition. From the determined median lifetime to failure, a projected lifetime at a fractional cumulative failure is calculated.
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