Method and apparatus for poly gate CD control

Details Method and apparatus for poly gate CD control Method and apparatus for poly gate CD control

2006-04-25

2006-04-25

Picard, Leo (Department: 2125)

Data processing: generic control systems or specific application

Generic control system, apparatus or process

Optimization or adaptive control

C700S029000, C700S030000, C700S121000, C156S345420

Reexamination Certificate

active

07035696

ABSTRACT:
Systems and methods are provided that facilitate semiconductor processing, including etch processes. The invention provides real-time two-dimensional etch rate control. Prior to starting an etch process, a control model is selected that relates to the etch process. A formula or function description is developed from the model and solved to obtain process parameter values that are predicted to produce the desired etch rates. During the fabrication etch process, critical dimension measurements of a polysilicon gate are obtained. From these measurements, the etch process is modified so as to achieve a desired horizontal etch rate and a desired vertical etch rate. The etch process results in a polysilicon gate having a desired rectangular profile.

REFERENCES:
patent: 4436584 (1984-03-01), Bernacki et al.
patent: 5242536 (1993-09-01), Schoenborn
patent: 5402367 (1995-03-01), Sullivan et al.
patent: 5527396 (1996-06-01), Saitoh et al.
patent: 5926690 (1999-07-01), Toprac et al.
patent: 6713365 (2004-03-01), Lin et al.
“Supervisory Run-to-Run Control of Polysilicon Gate Etch Using In Situ Ellipsometry” -Butler et al, Texas Instruments. IEEE 1994.
“PID—The Basic Technique For Feedback Control” -Manufacturing.net, Vince VanDoren, Jan. 1, 1997.

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