Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1996-08-26
1999-02-02
Gupta, Yogendra N.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438747, 438748, 451278, H01L 21304
Patent
active
058664807
ABSTRACT:
A polishing pad is adhered to the top surface of a flat polishing pad holder of a platen. A substrate holding head for holding and rotating a semiconductor substrate is provided above the platen. The semiconductor substrate is rotated and pressed against the polishing pad on the platen. A slurry is supplied in a prescribed amount from a slurry supply pipe onto the polishing pad. A slat-like slurry pushing member for pushing the slurry to a central portion of the platen is provided slidably over the polishing pad. The slurry pushing member is fixed so that an inner portion thereof in a radial direction of the platen is downstream of an outer portion thereof in the radial direction of the platen in the direction of rotation of the platen during polishing.
REFERENCES:
patent: 4910155 (1990-03-01), Cote et al.
patent: 5081051 (1992-01-01), Mattingly et al.
patent: 5216843 (1993-06-01), Breivolgel et al.
patent: 5308438 (1994-05-01), Cote et al.
patent: 5341602 (1994-08-01), Foley
patent: 5527424 (1996-06-01), Mullins
Murakami Tomoyasu
Nishio Mikio
Gupta Yogendra N.
Matsushita Electric - Industrial Co., Ltd.
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