Method and apparatus for polishing metal surfaces

Etching a substrate: processes – Nongaseous phase etching of substrate – Relative movement between the substrate and a confined pool...

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216 92, 216105, 216106, 438691, 438748, 156345, C23F 102, C23F 144, C23F 108, H05K 306

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057594279

ABSTRACT:
A technique for chemically planarizing an exposed surface of metal on a substrate to a pre-determined thickness is provided. The substrate has an exposed metal surface such as copper circuitry on a dielectric substrate which is to be planarized. Typically, this will be circuitization extending above a photoresist layer. A planarizing head is rotated against the substrate, with the planarizing head in contact with the metal surface on the substrate. A chemical etchant, essentially free of abrasive material, is continuously supplied to the interface between the metal surface and the planarizing head. The planarizing continues until a predetermined thickness of the metal has been reached. In circuit board manufacturing, this will form a surface co-planar with the photoresist. In some instances where significant height reduction is required, thus requiring significant metal removal, several passes of the substrate may be required or a device with multiple heads may be used. On all but the last pass or last head, the planarizing head may include a film of polyester impregnated with very fine grit, such as 15.mu. or less silicon carbide (SiC). However, on the final pass or head, a relatively hard surface roll, e.g., rubber, free of added grit, is used to ensure a planar surface free of gouges.

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"Planarization of Films Used in IC Fabrication by Laser-Induced Chemical Etching," C.J. Hendricks, IBM Technical Disclosure Bulletin, vol. 26, No. 10B, Mar. 1984.

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