Method and apparatus for plasma etching a wafer

Details Method and apparatus for plasma etching a wafer Method and apparatus for plasma etching a wafer

2005-01-04

2005-01-04

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

Reexamination Certificate

active

06838390

ABSTRACT:
A method utilizing a plasma etching machine which comprises a process chamber defining an interior region and including a bottom wall having an aperture and a block disposed in the aperture and including a longitudinally extending bore. A shaft extends through the bore and includes a spider push rod extending longitudinally therethrough. An internally cooled chuck is coupled to the shaft and disposed in the interior region and cooperates with the shaft to define a chamber. A spider is disposed in the chamber and is coupled to the push rod. A lift mechanism is coupled to the shaft and the push rod so that the spider pushes up on a wafer in response to actuation of the lift mechanism. A wafer clamping mechanism is coupled to the push rod if a mechanical clamp is used. In the case of electrostatic clamp the bias applied to the chuck is coupled with the use of a rotational roller to allow the bias to be applied to the chuck for the duration of the etch process. A RF source is needed for ionization of the gas. If the plasma etching machine has RF power applied through the bottom, then a rotational roller is used for this as well and must be isolated from the electrostatic voltage used to clamp the wafer.

REFERENCES:
patent: 4615755 (1986-10-01), Tracy et al.
patent: 4859304 (1989-08-01), Cathey et al.
patent: 4859304 (1989-08-01), Cathey et al.
patent: 4869801 (1989-09-01), Helms et al.
patent: 4902531 (1990-02-01), Nakayama et al.
patent: 4902531 (1990-02-01), Nakayama et al.
patent: 4992137 (1991-02-01), Cathey, Jr. et al.
patent: 5055964 (1991-10-01), Logan et al.
patent: 5221403 (1993-06-01), Nozawa et al.
patent: 5255153 (1993-10-01), Nozawa et al.
patent: 5275683 (1994-01-01), Arami et al.
patent: 5302241 (1994-04-01), Cathey, Jr.
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5354382 (1994-10-01), Sung et al.
patent: 5380401 (1995-01-01), Jones
patent: 5382311 (1995-01-01), Ishikawa et al.
patent: 5460684 (1995-10-01), Saeki et al.
patent: 5460684 (1995-10-01), Saeki et al.
patent: 5494522 (1996-02-01), Moriya et al.
patent: 5539179 (1996-07-01), Nozawa et al.
patent: 5556500 (1996-09-01), Hasegawa et al.
patent: 5583736 (1996-12-01), Anderson et al.
patent: 5605603 (1997-02-01), Grimard et al.
patent: 5671119 (1997-09-01), Huang et al.
patent: 6135052 (2000-10-01), Fujii et al.

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