Method and apparatus for performing operative testing on an inte

Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element

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324765, 39518301, G01R 3128

Patent

active

059296500

ABSTRACT:
A method of detecting defective CMOS devices by quiescent current (IDDQ) behavior using a monitor circuit resident in the expendable areas of a die and/or wafer. One embodiment of the present invention incorporates a monitor unit (10) into the scribe grid of a wafer, where pads (2, 3, 4) are built in the corners of the die (5) and connected to the monitor unit (10) via metal connects in the wafer. The monitor unit (10) determines defective die based on IDDQ as expressed by decay of voltage (Vdd) in time, where Vdd is supplied to a die by way of a switch (20) in the monitor unit (10). Alternate embodiments incorporate various configurations and incorporate functional and other tests into a wafer level test system. Other embodiments provide the monitor unit on the die, allowing for later testing and user confirmation.

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patent: 5442282 (1995-08-01), Rostoker et al.
Hsue, et al., "Built-In Current Sensor For IDDQ Test In CMOS," International Test Conf., pp. 635-641 (1993).
Rius, et al., "Proportional BIC Sensor For Current Testing," Electronic Testing: Theory and Appl. vol. 3; pp. 387-396 (1992).
Rubio, et al., "A Built-In Quiescent Current Monitor For CMOS VLSI Circuits," Eur. Design and Test Conf., pp. 581-585 (1995).
Maly, et al., "Built In Current Testing," J. Solid-State Circuits, vol. 27, No. 3., pp. 425-428 (1992).
Keating, et al., "A New Approach To Dynamic IDD Testing," International Test Conf., pp. 316-321 (1987).

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