Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system
Reexamination Certificate
2008-01-29
2008-01-29
Rodriguez, Paul (Department: 2123)
Data processing: structural design, modeling, simulation, and em
Simulating electronic device or electrical system
C716S030000, C716S030000, C430S005000
Reexamination Certificate
active
07324930
ABSTRACT:
A method of preparing a file that stores layout of devices to be created with photolithography for optical and process correction (OPC). Polygons that define structures to be created are initially fragmented into edge segments and a simulation of how the edge segments will be printed under process conditions is performed. The results of the simulation are used to adjust/refragment the edge segments. In one embodiment, the curvature of light intensity at the edge segments is used to adjust the fragmentation of the polygons.
REFERENCES:
patent: 5815685 (1998-09-01), Kamon
patent: 5825647 (1998-10-01), Tsudaka
patent: 6033814 (2000-03-01), Burdorf et al.
patent: 6080527 (2000-06-01), Huang et al.
patent: 6120952 (2000-09-01), Pierrat et al.
patent: 6226781 (2001-05-01), Nistler et al.
patent: 6249904 (2001-06-01), Cobb
patent: 6263299 (2001-07-01), Aleshin et al.
patent: 6269472 (2001-07-01), Garza et al.
patent: 6301697 (2001-10-01), Cobb
patent: 6312854 (2001-11-01), Chen et al.
patent: 6370679 (2002-04-01), Chang et al.
patent: 6649309 (2003-11-01), Mukherjee
patent: 2005/0278686 (2005-12-01), Word et al.
Cobb, N., and A. Zakhor, “Fast, Low-Complexity Mask Design,” Proceedings of SPIE, vol. 2440: Symposium on Optical/Laser Microlithography VIII, Santa Clara, Calif., Feb. 22-24, 1995, pp. 313-327.
Vacca, A., et al., “Techniques to detect and analyze photomask CD uniformity errors,”Proceedings of SPIE, 19th Annual Symposium on Photomask Technology, Paper 3873-21, pp. 209-214, 1999.
Cobb, N., et al., “Experimental Results on Optical Proximity Correction with Variable Threshold Resist Model,”Optical Microlithography X, The International Society for Optical Engineering 3051:458-468, Mar. 1997.
Cobb, N.B., “Fast Optical and Process Proximity Correction Algorithms for Integrated Circuit Manufacturing,” Ph.D. dissertation, University of California at Berkeley, Spring 1988, pp. 64-71.
Cobb, N., et al., “Mathematical and CAD Framework for Proximity Correction,”Optical Microlithography IX, The International Society for Optical Engineering 2726: 208-222, Mar. 1996.
Benchmark Technologies, OPC Reference Standard (JIIIA) Reticle, Oct. 12, 1999.
“Resolution Enhancement Technologies (OPC/PSM),” Jul. 16, 2002, Mentor Graphics Internet Site, Technical Papers.
Randall, J., et al., “Lithography Simulation With Aerial Image—Variable Threshold Resist Model,”International Conference on Micro and Nano Engineering 46:59-60, Sep. 1998.
Rieger, M.L. and J.P. Stirniman, “Using Behavior Modeling for Proximity Correction,”SPIE Proceedings, The International Society for Optical Engineering, Optical/Laser Microlithography VII 2197:371-376, May 1994.
Schellenberg, F.M., et al., “SEMATECH Jlll Project: OPC Validation,”SPIE Proceedings, Optical Microlithography XI 3334:892-911, 1998.
Schellenberg, F.M., “Design for Manufacturing in the Semiconductor Industry: The Litho/Design Workshops,”Proceedings of the 12th Int'l. Conference on VLSI Design, Jan. 10-13, 1999, pp. 111-119.
Schellenberg, F.M., “Sub-Wavelength Lithography Using OPC,”Semiconductor Fabtech, 9th ed., Mar. 1999.
Spence, C., et al., “Integration of Optical Proximity Correction Strategies in Strong Phase Shifters Design for Poly-Gate Layers,”SPIE Proceedings, 19th Annual Symposium of Photomask Technology 3873:277-287, 1999.
Stirniman, J.P. and M.L. Rieger, “Optimizing Proximity Correction for Wafer Fabrication Processes,”Proc. SPIE, 14th Annual BACUS Symposium on Photomask Technology and Management 2322:239-246, Dec. 1994.
Washington, A.,Basic Technical Mathematics with Calculus, 2d ed., 1970, pp. 245-247, 260-262, 505-525.
Klarquist & Sparkman, LLP
Ochoa Juan Carlos
Rodriguez Paul
LandOfFree
Method and apparatus for performing OPC using model curvature does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for performing OPC using model curvature, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for performing OPC using model curvature will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2777269