Method and apparatus for performing internal device structure an

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257287, 257368, 257421, 257 48, H01L 310328

Patent

active

055613055

ABSTRACT:
A method and apparatus for finding internal charge flow distribution in a dual-channel field effect semiconductor device having at least two source terminals, two drain terminals, a control gate and two isolation gates. Electrical energy of different frequencies is applied to different ones of the source terminals for causing currents to flow in each of the channels between the source and drain terminals. Using the isolation gates to achieve channel pinch off, one of the drain terminals and one of the source terminals are selectively coupled to only one of the channels. A control signal is applied to the control gate for controlling the amount of the electrical energy conducting in each of the channels. Data is collected by measuring currents at the different frequencies at each of the drain terminals while a magnetic field perpendicular to the plane of the channels is varied. The data is subjected to a Schubnikov-de Haas analysis to find the amounts of source currents flowing in each of the channels and at each of the drain terminals.

REFERENCES:
patent: 4821093 (1989-04-01), Iafrate et al.
Smith et al., "A Selectively-Contacted Dual Channel High Electron Mobility ransistor," Army Science Conference Proceedings, vol. 3, 1990, pp. 347-355.
Khanna et al., "A Selectively Contacted Dual-Channel HEMT," IEEE Electron Device Letters, vol. 10, No. 12, Dec. 1989, pp. 531-533.
Eisenstein et al., "Independently Contacted Two-Dimensional Electron Systems in Double Quantum Wells," Applied Physics Letters 57(22), Nov. 1990, pp. 2324-2326.
Boebinger et al., "Magnetic-Field-Driven Destruction of Quantum Hall States in a Double Quantum Well," Physical Review Letters, vol. 64, No. 15, 9 Apr. 1990, pp. 1793-1796.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for performing internal device structure an does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for performing internal device structure an, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for performing internal device structure an will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1503582

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.