Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2006-11-10
2011-10-25
Negron, Daniell L (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
08045299
ABSTRACT:
A method and apparatus for oxidizing conductive redeposition in TMR sensors is disclosed. A TMR stack having a first electrode that includes at least a pinned layer and an antiferromagnetic (AFM) layer, a second electrode that includes a free layer and a tunnel barrier is formed. The TMR barrier layer is etched. Redeposition material is oxidized and the barrier is healed using an oxidizing agent selected from the group consisting of ozone and water vapor.
REFERENCES:
patent: 5729410 (1998-03-01), Fontana et al.
patent: 5898547 (1999-04-01), Fontana et al.
patent: 6278582 (2001-08-01), Okawa et al.
patent: 6656894 (2003-12-01), Peters et al.
patent: 2002/0064005 (2002-05-01), Arasawa et al.
patent: 2002/0064594 (2002-05-01), Nakajima et al.
patent: 2002/0159203 (2002-10-01), Saito et al.
patent: 2002/0186514 (2002-12-01), Childress et al.
patent: 2003/0151859 (2003-08-01), Hayashi et al.
patent: 2003/0231437 (2003-12-01), Childress et al.
patent: 61039524 (1986-02-01), None
patent: 4098747 (1992-03-01), None
patent: 5109668 (1993-04-01), None
patent: 0512211998 (1998-05-01), None
Takeshi Hattori, “Implementing a single-wafer cleaning technology suitable for minifab operations,” Micromagazine.com, 13 pages, Feb. 1, 2004.
Fontana, Jr. Robert E.
Zolla Howard G.
Ashford Tamara
Hitachi Global Storage Technologies - Netherlands B.V.
Merchant & Gould
Negron Daniell L
LandOfFree
Method and apparatus for oxidizing conductive redeposition... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for oxidizing conductive redeposition..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for oxidizing conductive redeposition... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4277120