Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-12-11
2007-12-11
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185050, C365S185180, C365S185210, C365S185270
Reexamination Certificate
active
11191329
ABSTRACT:
A memory cell with a charge storage structure is read by measuring current between the substrate region of the memory cell and one of the current carrying nodes of the memory cell. The read operation decreases the coupling between different parts of the charge storage structure when other parts of the charge storage structure store data that are not of interest. The sensing window of the memory cell can be greatly improved by this read operation. Example arrangements are a single memory cell, a column or NOR-connected memory cells, and a virtual ground array of memory cells.
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Lu Tao Cheng
Tsai Wen Jer
Yeh Chih Chieh
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Pham Ly Duy
Suzue Kenta
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