Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-01-29
2008-01-29
Pham, Ly Duy (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185160, C365S185170, C365S185180, C365S185260, C365S185270
Reexamination Certificate
active
07324376
ABSTRACT:
A memory cell with a charge storage structure is read by measuring current between the substrate region of the memory cell and one of the current carrying nodes of the memory cell. The read operation decreases the coupling between different parts of the charge storage structure when other parts of the charge storage structure store data that are not of interest. The sensing window of the memory cell can be greatly improved by this read operation. Example arrangements are a series of memory cells, and an array of series of memory cells.
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Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Pham Ly Duy
Suzue Kenta
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