Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system – Circuit simulation
Patent
1997-12-16
2000-08-08
Teska, Kevin J.
Data processing: structural design, modeling, simulation, and em
Simulating electronic device or electrical system
Circuit simulation
G06F 9455
Patent
active
060995742
ABSTRACT:
Process simulation for LSIs and other semiconductor devices will handle plural same impurities introduced in different processes as different impurities. Thus, by handling them as different impurities in calculation, it is possible to obtain the distribution profiles of impurities in semiconductor devices without being effected by another same impurity introduced in another process or a number of processes during processing. With this, even a plurality of process conditions are discussed or when one or some of process(es) in a sequence of semiconductor device fabrication processes is (are) changed in procedure, it is not necessary to repeat the process simulation many times from the beginning. And it is possible to easily decide which process must be changed in conditions based on a finally obtained structure of semiconductor devices. The process simulation results are used directly as input to device simulation, to rapidly obtain performance of semiconductor devices such as current vs voltage characteristics. Therefore, the efficiency of calculations required to obtain the optimal conditions for semiconductor structures can be improved, thus shortening the lapse of time for designing and development of semiconductor devices.
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patent: 5468974 (1995-11-01), Aronowitz et al.
patent: 5684723 (1997-11-01), Nakadai
patent: 5859784 (1999-11-01), Sawahata
patent: 5886906 (1999-03-01), Tatsumi et al.
Lee and Chung, Simulation of Three-Dimensional Stop-Ion and Deposited Energy Distributions in Amorphous Chalcogenide Resist Film by Ga Ion Exposure, May 1995, pp. 572-575.
Amakawa Hirotaka
Fukuda Sanae
Kanemura Takahisa
Fiul Dan
Kabushiki Kaisha Toshiba
Teska Kevin J.
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