Optics: measuring and testing – Of light reflection
Patent
1992-06-17
1995-01-03
Rosenberger, Richard A.
Optics: measuring and testing
Of light reflection
356432, G01N 2155, G01N 2184
Patent
active
053791096
ABSTRACT:
An apparatus for non-destructively measuring resistivity of a semiconductor, such as InP, comprises light sources for illuminating a preselected portion of the semiconductor with first and second light beams, each of a preselected single wavelength, the first light beam operating to excite the semiconductor by photo injecting carriers, and the second light beam bombarding the local portion of the semiconductor with a preselected photon energy. The apparatus measures a fractional change in reflectance of the second light beam responsive to the first light beam, and records this fractional change in reflectance for various values of photon energy of the second light beam, to generate a photoreflectance line-shape. The photoreflectance line-shape is used to calculate a photoreflectance line-shape phase angle, which is used to determine the resistivity of the preselected portion of the semiconductor.
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"Novel Contactless electroreflectance spectroscopy of semiconductors"--Gal t al.; Applied Physics letters, 56(6) 5 Feb. 1990.
Berry Alok K.
Bottka Nicholas
Gaskill D. Kurt
Keesee LaCharles
McDonnell Thomas E.
Rosenberger Richard A.
Stockstill Charles J.
The United States of America as represented by the Secretary of
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