Method and apparatus for multilayer photoresist dry development

Details Method and apparatus for multilayer photoresist dry development Method and apparatus for multilayer photoresist dry development

2008-01-07

2011-11-01

Tran, Binh X (Department: 1713)

Etching a substrate: processes

Gas phase etching of substrate

C216S072000, C216S074000, C438S703000, C438S717000, C438S736000

Reexamination Certificate

active

08048325

ABSTRACT:
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising ammonia (NH3), and a passivation gas; forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute NH3and a hydrocarbon gas such as at least one of C2H4, CH4, C2H2, C2H6, C3H4, C3H6, C3H8, C4H6, C4H8, C4H10, C5H8, C5H10, C6H6, C6H10, and C6H12. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising ammonia (NH3), and a passivation gas.

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