Method and apparatus for MOSFET radiation failure circumvention

Details Method and apparatus for MOSFET radiation failure circumvention Method and apparatus for MOSFET radiation failure circumvention

1986-12-18

1989-01-24

Heyman, John S.

Electrical transmission or interconnection systems

Personnel safety or limit control features

Interlock

307311, 307580, 307570, 357 29, H03K 1908

Patent

active

048002992

ABSTRACT:
A method and electrical circuit for circumventing MOSFET failure resulting from exposure to high energy level radiation. The method includes the steps of turning the MOSFET on during the radiation event and keeping the MOSFET on at the end of the event until parasitic elements inherent in the MOSFET have recovered. In one presently preferred embodiment this method is implemented by providing a bipolar transistor across the voltage source of the MOSFET and the MOSFET gate. During exposure to radiation of very high intensity, radiation induced photo currents in the bipolar transistor turn the transistor on, thereby applying an "on enabling" voltage the gate of the MOSFET device to turn on the MOSFET device. The MOSFET, in an "on" state, effectively shorts out the inherent parasitic elements thereby preventing destruction of the parasitic elements and, consequently, the MOSFET. A resistor is provided to keep the MOSFET "on" until the parasitic elements recover.

REFERENCES:
patent: 3886376 (1975-05-01), Bickley et al.
patent: 4011471 (1977-03-01), Rockett, Jr.
patent: 4225797 (1980-09-01), Fredrickson
patent: 4590395 (1986-05-01), O'Connor et al.

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