Method and apparatus for monolithic optoelectronic integrated ci

Details Method and apparatus for monolithic optoelectronic integrated ci Method and apparatus for monolithic optoelectronic integrated ci

1995-07-18

1997-04-15

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

257185, 257190, 257200, H01L 310328, H01L 310336, H01L 31072, H01L 31109

Patent

active

056212275

ABSTRACT:
A monolithic Optoelectronic Integrated Circuit including a photodiode and a CMOS readout circuit is described in which the diode is formed by compositionally graded layers of In.sub.x Ga.sub.1-x As selectively epitaxially grown between a substrate of Si and an absorption layer of In.sub.x Ga.sub.1-x As, the areas of said layers being less than 500 .mu.m.sup.2 and wherein a readout circuit on said substrate is coupled to said diode.

REFERENCES:
patent: 4996163 (1991-02-01), Sasaki
patent: 5144379 (1992-09-01), Eshita et al.
patent: 5242839 (1993-09-01), Oh et al.
patent: 5387796 (1995-02-01), Joshi et al.
A.M. Joshi and F.J. Effenberger, "Monolithic InGaAs-on-Silicon Detector with a CMOS Switched Capacitor Integrator," SPIE Proceedings--Fiber Optic Materials and Components, vol. 2290, Jul. 28-29, 1994, pp. 430-437.

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