Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1976-12-20
1978-08-29
Dixon, Harold A.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250272, 250492B, A61K 2702
Patent
active
041106253
ABSTRACT:
Practice of this disclosure obtains a measure of the dose or fluence of implanted ions into a target for device fabrication by monitoring emitted X-rays. Illustratively, ion beams of B.sup.+, P.sup.+ or As.sup.+ have been implanted into Si over the ion energy range of 20 KeV to 2800 KeV and the data of counts of emitted X-rays has been correlated with both the solid angle intercepted by the counter and the charge intercepted by the target. In particular, the low energy soft Si(L) X-rays at 136A have been discovered for the practice of this disclosure to be very intense. The principles of this disclosure are especially applicable for very low ion doses, i.e. .ltorsim. 10.sup.12 /cm.sup.2 where charge integration is not feasible; and for neutral beam implantation with currents above about 2 milliamperes. Reproducible semiconductor devices can be fabricated by practice of this disclosure, i.e., with substantially reproducible operational characteristics, e.g., bipolar and field-effect transistors with silicon integrated circuit technology.
REFERENCES:
patent: 3563809 (1971-02-01), Wilson
patent: 3573454 (1971-04-01), Andersen
patent: 3699334 (1972-10-01), Cohen et al.
Cainns James A.
Lurio Allen
Ziegler James F.
Dixon Harold A.
International Business Machines - Corporation
Nanes Murray
Weins Michael J.
Wiener Bernard N.
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