Method and apparatus for modeling devices having different...

Data processing: structural design – modeling – simulation – and em – Simulating electronic device or electrical system

Reexamination Certificate

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C703S014000, C703S002000, C703S015000, C716S030000, C716S030000, C700S031000

Reexamination Certificate

active

10457945

ABSTRACT:
The present invention includes a method for modeling devices having different geometries, in which a range of interest for device geometrical variations is divided into a plurality of subregions each corresponding to a subrange of device geometrical variations. The plurality of subregions include a first type of subregions and a second type of subregions. The first or second type of subregions include one or more subregions. A regional global model is generated for each of the first type of subregions and a binning model is generated for each of the second type of subregions. The regional global model for a subregion uses one set of model parameters to comprehend the subrange of device geometrical variations corresponding to the G-type subregion. The binning model for a subregion includes binning parameters to provide continuity of the model parameters when device geometry varies across two different subregions.

REFERENCES:
patent: 5825673 (1998-10-01), Watanabe
patent: 6577992 (2003-06-01), Tcherniaev et al.
patent: 6795800 (2004-09-01), Lee
patent: 2002/0035462 (2002-03-01), Kidera et al.
patent: 2002/0123872 (2002-09-01), Okada
patent: 2002/0133785 (2002-09-01), Kondo
patent: 2002/0193892 (2002-12-01), Bertsch et al.
patent: 2003/0065494 (2003-04-01), Croix
patent: 2003/0163295 (2003-08-01), Jakatdar et al.
patent: 2003/0182639 (2003-09-01), Lehner et al.
patent: 2004/0002844 (2004-01-01), Jess et al.
patent: 2004/0044510 (2004-03-01), Zolotov et al.
patent: 2004/0064296 (2004-04-01), Saxena et al.
Jiang et al., “MOSFET Parameter extraction in VDSM ULSI CAD with a parallel programming strategy”, IEEE 2001.
Ferreira et al., “LASCA-Interconnect parasitic extraction tool for deep-submicron IC Design”, IEEE 2000.
Chinnery et al., “Achievinf 550 MHz in an ASIC Methodology”, ACM 2001.
Manne at al., “Computing the Maximum Power cycles of a sequential circuit”, ACM 1995.
Cheng et al., “A physical and scalable I-V model in BSIMv3 for analog/digital circuit simulation”, IEEE 1997.
Hsu et al., “Study of extraction analysis of BSIM4 model parameters on MOSFET device”, Dept. of Electrical Engineering, Feng Cha University, Taiwan 1998.
Yuhua Cheng et al. “MOSFET Modeling & BSIM3 User's Guide”, by Kluwer Academic Publishers, (Index and Contents) 1999.
John G. J. Chern et al., “A New Method to Determine MOSFET Channel Length”, IEEE Electron Device Letters, vol. EDL.-1, No. 9, Sep. 1980, pp. 170-173.
Hassan Rofigul et al., “Drain and Source Resistances of Short-Channel LDD MOSFETS”, Solid State Electronics vol. 41, No. 5, pp. 778-780, 1997.
Daniel P. Foty, “MOSFET Modeling With Spice Principles and Practice”, by Prentice Hall PTR, (Contents and Index), 1997.
Weidong Liu et al., “BSIM3.2.2. MOSFET Model—User's Manual”, Department of El. Engineering and Computer Sciences UC Berkeley, (Table of Contents), 1999.
Weidong Liu et al., “BSIM4.0.0 MOSFET Model—User's Manual”, Department of El. Engineering and Computer Sciences UC Berkeley, (Table of Contents), 2000.
Kazuo Terada et al., “A New Method to Determine Effective MOSFET Channel Length”, Japanese J. of Applied Physics, vol. 18, No. 5, May 1979, pp. 953-959.
BSIMPro™ “SPICE Model Parameter Extraction”, BTA Technology, title pg., pp. 1-9, last pg., 1999.
BSIMPro+ Device Modeling Guide Version 2001.3 by Celestry Design Technologies, Inc., published Sep. 2001.

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