Method and apparatus for mechanical planarization and endpoint d

Abrasive tool making process – material – or composition – With carbohydrate or reaction product thereof

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51281SF, 51283R, 36447406, B24B 4900

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active

050817965

ABSTRACT:
A method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer or the like. The apparatus includes a polishing head for rotating the wafer under a controlled pressure against a rotating polishing platen. The polishing head is mounted such that the wafer can be moved across the polishing platen to overhang a peripheral edge of the polishing platen and expose the surface of the wafer. Endpoint detection apparatus in the form of a laser interferometer measuring device is directed at an unpatterned die on the exposed surface of the wafer to detect oxide thickness at that point. The laser light beam is enclosed in a column of liquid to clean the wafer surface at the point of detection and to provide a uniform reference medium for the laser light beam.

REFERENCES:
patent: 3841031 (1974-10-01), Walsh
patent: 4083272 (1978-04-01), Miller
patent: 4193226 (1980-03-01), Gill, Jr. et al.
patent: 4365301 (1982-12-01), Arnold et al.
patent: 4811522 (1989-03-01), Gill, Jr.
patent: 4930262 (1990-06-01), Sennewald

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