Method and apparatus for mechanical and chemical-mechanical...

Abrading – Flexible-member tool – per se – Work face variegated or on projecting backing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C451S527000

Reexamination Certificate

active

06364757

ABSTRACT:

TECHNICAL FIELD
The present invention relates to mechanical and chemical-mechanical planarization of microelectronic substrates. More particularly, an embodiment of the present invention relates to a planarization polishing pad for enhancing the performance and/or reducing the costs of planarizing substrates, and to methods of using and making the polishing pad.
BACKGROUND OF THE INVENTION
Mechanical and Chemical-Mechanical planarization processes remove material from the surface of semiconductor wafers, field emission displays and many other microelectronic substrates to form a flat surface at a desired elevation in the substrates.
FIG. 1
schematically illustrates a planarizing machine
10
with a platen
20
, a carrier assembly
30
, a polishing pad
40
, and a planarizing solution
44
on the polishing pad
40
. The planarizing machine
10
may also have a compressible under-pad
25
attached to an upper surface
22
of the platen
20
for supporting the polishing pad
40
. In many planarizing machines, a drive assembly
26
rotates (arrow A) and/or reciprocates (arrow B) the platen
20
to move the polishing pad
40
during planarization.
The carrier assembly
30
controls and protects a substrate
12
during planarization. The carrier assembly
30
generally has a lower surface
32
with a pad
34
that holds the substrate
12
via suction, and an actuator assembly
36
is typically attached to the carrier assembly
30
to rotate and/or translate the substrate
12
(arrows C and D, respectively). However, some carrier assemblies
30
are weighted, free-floating disks (not shown) that slide over the polishing pad
40
.
The polishing pad
40
and the planarizing solution
44
may separately, or in combination, define a polishing environment that mechanically and/or chemically removes material from the surface of the substrate
12
. The polishing pad
40
may be a conventional polishing pad made from a relatively compressible, porous continuous phase matrix material (e.g., polyurethane), or it may be an abrasive polishing pad with abrasive particles fixedly bonded to a suspension medium. The planarizing solution
44
may be a chemical-mechanical planarization slurry with abrasive particles and chemicals for use with a conventional non-abrasive polishing pad, or the planarizing solution
44
may be a liquid without abrasive particles for use with an abrasive polishing pad. To planarize the substrate
12
with the planarizing machine
10
, the carrier assembly
30
presses the substrate
12
against a planarizing surface
42
of the polishing pad
40
in the presence of the planarizing solution
44
. The platen
20
and/or the carrier assembly
30
then move relative to one another to translate the substrate
12
across the planarizing surface
42
. As a result, the abrasive particles and/or the chemicals in the polishing environment remove material from the surface of the substrate
12
.
Planarizing processes must consistently and accurately produce a uniformly planar surface on the substrate to enable precise fabrication of circuits and photo-patterns on the substrate. As the density of integrated circuits increases, the uniformity and planarity of the substrate surface is becoming increasingly important because it is difficult to form sub-micron features or photo-patterns to within a tolerance of approximately 0.1 &mgr;m when the substrate surface is not uniformly planar. Thus, planarizing processes must create a highly uniform, planar surface on the substrate.
In conventional planarizing processes, the substrate surface may not be uniformly planar because the rate at which material is removed from the substrate surface (the “polishing rate”) typically varies from one region on the substrate to another. The polishing rate depends, in part, upon the distribution of abrasive particles and chemicals between the substrate surface and the polishing pad. One particular problem with conventional planarizing devices and methods is that the perimeter of the substrate wipes a significant amount of the planarizing solution off of the polishing pad. As such, the planarizing solution builds up in a high zone along a leading edge of the substrate, which reduces the volume of planarizing solution contacting the center of the substrate. Conventional planarizing devices and methods, therefore, typically produce a non-uniform, center-to-edge planarizing profile across the substrate surface.
To reduce such a center-to-edge planarizing profile, several conventional non-abrasive polishing pads have holes or grooves on their upper surfaces to transport a portion of the planarizing solution below the substrate surface during planarization. A Rodel IC-1000 polishing pad, for example, is a relatively soft, porous polyurethane pad with a number of large slurry wells approximately 0.05-0.10 inches in diameter that are spaced apart from one another across the planarization surface by approximately 0.125-0.25 inches. The large wells are expected to hold small volumes of slurry below the planarizing surface so that the substrate may draw the slurry out of the wells as the substrate translates over the pad. However, such pads still produce a significant center-to-edge planarizing profile indicating that the perimeter of the substrate presses some of the slurry out of the wells ahead of the center of the substrate. U.S. Pat. No. 5,216,843 describes another polishing pad with a plurality of macro-grooves formed in concentric circles and a plurality of micro-grooves radially crossing the macro-grooves. Although such grooves may improve the planarity of the substrate surface, substrates planarized with such pads still exhibit non-uniformities across the substrate surface indicating an inadequate distribution of planarizing solution and abrasive particles across the substrate.
Other types of polishing pads also do not adequately resolve the center-to-edge planarizing profile. For example, conventional porous polishing pads with small micro-pores at the planarizing surface are generally subject to producing a center-to-edge planarizing profile indicating that the perimeter of the substrate presses the planarizing solution out of the pores before the center of the substrate passes over the pores. Additionally, even fixed-abrasive polishing pads that have a uniform distribution of abrasive particles may produce a center-to-edge planarizing profile because the perimeter of the substrate also tends to sweep the planarizing solution off of abrasive polishing pads. Therefore, conventional polishing pads typically produce an undesired center-to-edge planarizing profile on the substrate surface.
To improve the distribution of slurry under the substrate, U.S. Pat. No. 5,489,233 discloses a polishing pad composed of a solid, uniform polymer sheet having no intrinsic ability to absorb or transport slurry particles. One type of polymer sheet disclosed in U.S. Pat. No. 5,489,233 is Mylar® manufactured by E.I. du Pont de Nemours of Wilmington, Del. The Polymer sheet has a surface pattern or texture that has both large and small flow channels to permit the transport of slurry across the surface of the polishing pad. The channels are mechanically produced on the pad. In a preferred embodiment, the pad has a macro-texture produced prior to planarization and a micro-texture produced by abrading the pad with a plurality of small abrasive points at regular selected intervals during planarization. Although the pad disclosed in U.S. Pat. No. 5,489,233 improves the uniformity of the substrate surface in some circumstances, it may not provide consistent planarization characteristics because scratching the surface with small abrasive points may not duplicate the micro-texture from one pad to the next. Thus, the polishing pad described in U.S. Pat. No. 5,489,233 may not provide consistent results from one substrate to the next.
Another factor affecting the uniformity of the substrate surface is the condition of the polishing pad. The planarizing surface of the polishing pad typically deteriorates after polishing a number of substrat

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method and apparatus for mechanical and chemical-mechanical... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for mechanical and chemical-mechanical..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for mechanical and chemical-mechanical... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2833701

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.