Method and apparatus for measuring variations in composition in

Details Method and apparatus for measuring variations in composition in Method and apparatus for measuring variations in composition in

1977-11-30

1979-03-06

Evans, F. L.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrophotometer

356445, G01J 342, G01N 2148

Patent

active

041428021

ABSTRACT:
There is disclosed an apparatus and method for measuring the variations in composition across the surface of binary and ternary alloy semiconductors utilizing electrolyte electroreflectance. The technique is non-destructive, can readily be employed under atmospheric conditions at room temperature, and is sensitive enough to determine changes of composition of about 1% with a spatial resolution of about 100.mu.. The procedure is very useful for the selection of crystals for detector arrays, solid states lasers, or electronic devices. It can also be utilized as a convenient tool for evaluating material grown either in bulk form or epitaxial layers, thus providing feedback for the adjustment of crystal growth parameters. The apparatus includes a mechanism for stepping the semiconductor being investigated in two dimensions while performing electroreflectance measurements; the measurement results can then be plotted on contour maps.

REFERENCES:
patent: 3850508 (1974-11-01), Sittig et al.
Shaklee et al., Physical Review Letters, vol. 15, No. 23, Dec. 6, 1965, pp. 883-885.
Feinleib, Physical Review Letters, vol. 16, No. 26, Jun. 27, 1966, pp. 1200-1202.
Cardona et al., Physical Review, vol. 154, No. 3, Feb. 15, 1967, pp. 696-720.
Moritani et al., Journal of the Physical Society of Japan, vol. 34, No. 1, Jan. 1973, pp. 79-88.

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