Method and apparatus for measuring the threshold voltage of flas

Details Method and apparatus for measuring the threshold voltage of flas Method and apparatus for measuring the threshold voltage of flas

1998-04-30

1999-10-12

Tran, Andrew Q.

Static information storage and retrieval

Floating gate

Particular biasing

3651853, 36518533, 36518527, 36518509, G11C 1606

Patent

active

059663308

ABSTRACT:
There is provided a method of measuring the value of the threshold voltage of a memory core cell in an array of flash EEPROM memory core cells. The memory core cell includes an array core transistor having a corresponding array threshold voltage which is to be measured. There is provided a reference current level at a constant value which is generated by a reference cell transistor having a fixed bias condition and a fixed threshold voltage so that the relationship of the bias voltage applied to its gate and the fixed threshold voltage is linear. A control gate bias voltage applied to the gate of the array core transistor having the array threshold voltage which is to be measured is varied continuously. The varied control gate bias voltage and the reference current level is compared so as to generate a high logic when the varied control gate bias voltage produces a core cell current which is greater than the reference current level to obtain immediately the value of the threshold voltage of the array core transistor.

REFERENCES:
patent: 4253059 (1981-02-01), Bell et al.
patent: 4301535 (1981-11-01), McKenny et al.
patent: 5153853 (1992-10-01), Eby et al.
patent: 5600594 (1997-02-01), Padoan et al.

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