Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2005-08-23
2005-08-23
Utech, Benjamin L. (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C117S038000, C117S055000
Reexamination Certificate
active
06932864
ABSTRACT:
In the method and apparatus for measuring the position of the phase interface during growth of a crystal from a melt in a crystal growth container according to the VGF method an incident optical signal is propagated to the phase interface between the melt and the crystal through a window (16) in the container (10) and a received optical signal reflected from the phase interface (14) is measured to determine the position of the phase interface. The position of the phase interface is established from the reflected signal by triangulation with a confocal optic system, by interferometric balancing or by transit time of the optical signal. The window (16) is preferably mounted in a preferably tilted orientation at the end of a tube (15), which is immersed in the melt (12).
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Axmann Hans-Joerg
Lentes Frank-Thomas
Parthier Lutz
Speit Burkhard
Wehrhan Gunther
Anderson Matthew
Schott Glas
Striker Michael J.
Utech Benjamin L.
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