Method and apparatus for measuring the lifetime on P-N semicondu

Details Method and apparatus for measuring the lifetime on P-N semicondu Method and apparatus for measuring the lifetime on P-N semicondu

1989-03-29

1990-09-11

Karlsen, Ernest F.

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324158T, G01R 3126

Patent

active

049566032

ABSTRACT:
A method for measuring the lifetime of P.N. semiconductor junctions which includes subjecting one side of the junction to monochromatic radiation of a pre-established intensity and measuring the voltage Vp generated by the photovoltaic effect at the ends of the junction in order to calculate the lifetime .tau. because of a correlation between .tau. and Vp which can be expressed by means of a function .tau.(Vp) that takes into account the data relating to the measuring conditions and the structural parameters of the junction.

REFERENCES:
patent: 3206674 (1965-09-01), Thuy et al.
patent: 3745454 (1973-07-01), Nikirk et al.
patent: 4211488 (1980-07-01), Kleinknecht
patent: 4578641 (1986-03-01), Tiedje
patent: 4581578 (1986-04-01), Honma et al.
patent: 4713819 (1927-12-01), Yoshikawa

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