Method and apparatus for measuring the ion implant dosage in a s

Optics: measuring and testing – Crystal or gem examination

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356318, 356417, G01N 2184

Patent

active

047550490

ABSTRACT:
A technique for measuring the ion implant dosage involves method and apparatus for directing pulses of coherent radiation from a laser to the surface of a semiconductor that has been subjected to ion implant. The intensity of the third harmonic reflected from the semiconductor is determined and correlated to determine the ion dosage within the semiconductor.

REFERENCES:
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Characterization of Ion Implanted Silicon--Applications for IC Process Control; by M. Markert et al; pp. 101-106; S. S. Tech., 11/83.
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