Method and apparatus for measuring the concentration of ions imp

Details Method and apparatus for measuring the concentration of ions imp Method and apparatus for measuring the concentration of ions imp

1997-06-30

2000-04-18

Kim, Robert H.

Optics: measuring and testing

By particle light scattering

With photocell detection

356432, 356359, G01B 902

Patent

active

060521856

ABSTRACT:
A method and apparatus that determines a concentration of ions implanted in a material is described. The method includes the steps of: (1) passing an excitation pulse through a diffracting mask (e.g., a phase or amplitude mask) to generate at least two excitation laser sub-pulses; (2) irradiating a region of the material with a grating pattern, formed by overlapping two excitation laser sub-pulses in time and space to initiate a time-dependent response (e.g., a change in refractive index) in the region; (3) diffracting a probe laser pulse having a duration that is at least long as the time-dependent response off the region to generate a time-dependent signal beam; (4) detecting the time-dependent signal beam to generate a signal waveform; and (5) processing the signal waveform to determine the concentration of ions implanted in the material.

REFERENCES:
patent: 4710030 (1987-12-01), Tauc et al.
patent: 5633711 (1997-05-01), Nelson et al.
patent: 5706094 (1998-01-01), Maris
patent: 5734470 (1998-03-01), Rogers et al.
Harata, et al., "Laser-Stimulated Scattering Microscope Study of an Ion-Implanted Silicon Surface," Jpn. J. Appl. Phys. vol. 32 (1993) Pt. 1, No. 8, pp. 3633-3638.

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