Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1994-10-07
1996-02-20
Regan, Maura K.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324766, 324765, 324537, G01R 3100
Patent
active
054932319
ABSTRACT:
A method and apparatus for measuring the barrier height distribution in an insulated gate field effect transistor by intermittently illuminating a partially transparent gate electrode under bias while applying varying back gate biases to the back gate electrode and measuring the currents conducted by the gate electrode and by the connected source and drain electrodes. Based upon the inverse Laplace transform of the ratio of the measured currents, the barrier height distribution in the transistor, including the average barrier height and the variance of the distribution of barrier heights, typically a Gaussian distribution, may be determined. A method and apparatus for adjusting the gate bias to compensate for variations in the electric field in the insulator layer due to charge generation in the insulator layer is also provided. In addition, the method and apparatus also provides for measuring the photocurrent collected under the gate electrode.
REFERENCES:
patent: 3605015 (1971-09-01), Copeland, III
patent: 4544887 (1985-10-01), Kamieniecki
patent: 5168159 (1992-12-01), Yagi
patent: 5200693 (1993-04-01), Singletery, Jr.
Richard Williams, Photoemission of Electrons from Silicon into Silicon Dioxide, Physical Review, vol. 140, No. 2A, Oct. 18, 1965, pp. A569-75.
Alvin M. Goodman, Photoemission of Electrons from Silicon and Gold into Silicon Dioxide, Physical Review, vol. 144, No. 2, Apr. 15, 1966, pp. 588-593.
C. A . Mead, E. H. Snow and B. E. Deal, Barrier Lowering and Field Penetration at Metal-Dielectric Interfaces, Applied Physics Letters, vol. 9, No. 1, Jul. 1, 1966, pp. 53-55.
W. Ludwig and B. Korneffel, Photoemission Studies on Thin Metal-Insulator-Metal Sandwiches, Phys. Stat. Sol., vol. 24, (1967), pp. K137-140.
R. J. Powell, Interface Barrier Energy Determination from Voltage Dependence of Photoinjected Currents, Journal of Applied Physics, vol. 41, No. 6, May 1970, pp. 2424-2432.
T. H. Ning, C. M. Osburn, and H. N. Yu, Emission Probability of Hot Electrons from Silicon into Silicon Dioxide, Journal of Applied Physics, vol. 48, No. 1, Jan. 1977, pp. 286-293.
H. Kroemer, Wu-Yi Chien, J. S. Harris, Jr. and D. D. Edwall, Measurement of Isotype Heterojunction Barriers by C-V Profiling.sup.a), Appl. Phys. Lett., vol. 36, No. 4, Feb. 15, 1980, pp. 295-297.
J. R. Brews and E. H. Nicollian, Improved MOS Capacitor Measurements Using the Q-C Method, Solid-State Electronics, vol. 27, No. 11, 1984, pp. 963-975.
Babic Davorin
Lofgren John C.
Nicollian Edward H.
Khosravi Kourosh Cyrus
Regan Maura K.
University of North Carolina
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