Method and apparatus for measuring surface carrier...

Details Method and apparatus for measuring surface carrier... Method and apparatus for measuring surface carrier...

2005-10-24

2008-09-02

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

Of light reflection

C356S432000

Reexamination Certificate

active

07420684

ABSTRACT:
A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density.

REFERENCES:
patent: 5255070 (1993-10-01), Pollak et al.
patent: 5260772 (1993-11-01), Pollak et al.
patent: 5287169 (1994-02-01), Pollak et al.
patent: 2005/0099623 (2005-05-01), Takeuchi et al.
patent: 2002-340675 (2002-11-01), None
V. L. Alperovich, A. G. Paulish, and A. S. Terekhov,“Domination of adatom-induced over defect-induced surface states on p-type GaAs (Cs,O) at room temperature,” Phys. Rev. B 50, 5480 (1994). [ISI].
Hideo Takeuchi, Toshitaka Kamo, Yoshitsugu Yamamoto, Tomoki Oku, “Photovoltaic effects on Franz-Keldysh oscillations in photoreflectance spectra,” J. Appl. Phys. 97, 063708 (2005).
C. Wetzel, T. Takeuchi, H. Amano, and I. Akasaki, “Piezoelectric Franz-Keldysh effect in strained GaIn/GaN heterostructures,” J. Appl. Phys. 85, 3786 (1999). [ISI].
Pearson, Ben and Paul Shearer, “Franz-Keldysh Effect,” University of Minnesota, http://mxp.physics.umn.edu/s05/Projects/S05Franz/, May 10, 2005.
Paget D, Bonnet J E, Berkovits V L, Chiaradia P and Alvila J “Sulfide-passivated GaAs (001). II. Electronic properties” 1996 Phys. Rev. B 53 4604 pp. 4615-4622.
Shen, H. et al.; “Franz-Keldysh oscillations in modulation spectroscopy”,J. Appl. Phys., vol. 78, No. 4, pp. 2151-2120, (Aug. 15, 1995).
Shen, H. et al.; “Photoreflectance study of surface Fermi level in GaAs and GaAlAs”,Appl. Phys. Lett., vol. 57, No. 20, pp. 2118-2120, (Nov. 12, 1990).
Hoffman, C. A. et al.; “Study of surface recombination in GaAs and InP by picosecond optical techniques”,J. Appl. Phys., vol. 51, No. 3, pp. 1603-1604 , (Mar. 1980).

Affiliated with

Also associated with

Rating

Method and apparatus for measuring surface carrier... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus for measuring surface carrier..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for measuring surface carrier... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3985202