Electricity: measuring and testing – Fault detecting in electric circuits and of electric components – Of individual circuit component or element
Patent
1994-08-15
1996-01-23
Wieder, Kenneth A.
Electricity: measuring and testing
Fault detecting in electric circuits and of electric components
Of individual circuit component or element
324750, 250310, 250311, G01R 3100
Patent
active
054867690
ABSTRACT:
In a method and apparatus for measuring quantitative voltage contrast, an electron beam of the scanning electron microscope is located on a specimen electrode, and a grid voltage of an energy analyzer of the scanning electron microscope is varied. A detector detects secondary electron emission from the specimen electrode. A measured peak voltage of the specimen electrode is determined based on output from the detector. A specimen electrode voltage corrected for type I local field effect error is then obtained using the measured peak voltage and a type I calibration curve. The type I calibration curve represents peak voltage versus specimen electrode voltage. Type II local field effect error in the specimen electrode voltage is then corrected based on a type II calibration curve. The type II calibration curve represents a shift in specimen electrode peak voltage versus adjacent electrode voltage.
REFERENCES:
Nakamura et al., An Analysis of the Local Field Effect on Electron Probe Voltage Measurements, Scanning Electron Microscopy, 1983/III, pp. 1187-1195.
Feuerbaum, VLSI Testing Using the Electron Probe, Scanning Electron Microscopy, 1979/I, pp. 285-296.
Fujioka et al., Local Field Effects on Voltage Measurement Using a Retarding Field Analyser in the Scanning Electron Microscopy, Scanning Electron Microscopy, 1981/I, pp. 323-332.
Taylor, The effect of passivation on the observation of voltage contrast in the scanning electron microscope, vol. 11, 1978, The Institute of Physics, J. Phys. D; Appl. Phys., pp. 2443-2454.
Hardy et al., A Voltage Contrast Detector for the SEM, vol. 8, Journal of Physics E: Scientific Instruments, 1975, pp. 789-793.
Chan et al., The Influence of Analyser Geometry Effects in Scanning Electron Microscope Voltage Contrast Measurements, vol. 2, No. 3, Scanning Microscopy, 1988, pp. 1419-1426.
Chan et al., Error Voltage Components in Quantitative Voltage Contrast Measurement Systems, vol. 5, No. 2, Scanning Microscopy, 1991, pp. 345-355.
Radzimski et al., Electron beam testing of integrated circuits with multilevel metal, American Vacuum Society, J. Vac. Sci. Technol., Nov./Dec. 1990, pp. 2037-2040.
Chan Daniel S. H.
Chim Wai K.
Phang Jacob C. H.
Khosravi Kourosh Cyrus
National University of Singapore
Wieder Kenneth A.
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