Method and apparatus for measuring high-frequency C-V characteri

Details Method and apparatus for measuring high-frequency C-V characteri Method and apparatus for measuring high-frequency C-V characteri

1993-12-22

1995-08-15

Wieder, Kenneth A.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324769, 324766, 324754, G01R 3100

Patent

active

054423023

ABSTRACT:
A method of measuring the high-frequency C-V characteristics of a MIS (e.g. MOS) device is disclosed. The method comprises the steps of providing the MIS device in a shielding-box shielding the device from an outside electromagnetic light, illuminating the device with a light of a wavelength preventing an induction of excess carriers at the surface of the semiconductor, applying a voltage of a high frequency to a gate electrode of the device, and alternating a sweep direction of the voltage. An apparatus implementing the method is also disclosed. The method and the apparatus accurately measure the MOS capacitance in response to a voltage applied to the gate electrode.

REFERENCES:
patent: 4323842 (1982-04-01), McGarrity et al.
patent: 5010294 (1991-04-01), Foell et al.
patent: 5140272 (1992-08-01), Nishimatsu et al.
IEICE Transactions on Electronics, "C-V Measurement and Simulation of Silicon-Insulator-Silicon (SIS) Structures for Analyzing Charges in Buried Oxides of Bonded SOI Materials", vol. E75-C, No. 12, pp. 1421-1429, Dec. 1992, Tokyo, Japan.
Solid State Technology, "C-V Plotting: Myths and Methods", vol. 36, No. 1, pp. 57-61, Jan. 1993, U.S.
A. Goetzberger, "Ideal MOS Curves for Silicon", The Bell System Technical Journal, Sep. 1966, pp. 1097-1122.
Bruce E. Deal et al., "Characteristics of the Surface-State Charge (Q.sub.ss) of Thermally Oxidized Silicon", J. Electrochem. Soc.: Solid State Science, Mar. 1967, pp. 266-273.

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