Method and apparatus for measuring film thickness in multilayer

Optics: measuring and testing – By dispersed light spectroscopy – Utilizing a spectrometer

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356355, G01B 902

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active

055554725

ABSTRACT:
The thicknesses of a first layer and of a second layer on a semiconductor wafer can be measured together by assuming that the second layer has a substantially uniform thickness. The thicknesses are measured by measuring reflectivity as a function of wavelength at a plurality of points on the wafer to provide a plurality of signatures, comparing each signature with signatures from libraries of theoretical signatures by calculating an error value associated with each signature; and determining the minimum error value. Each library is based upon a unique assumed thickness of the second layer. Thus, the thickness of the second layer is determined by identifying the library associated with the minimum error value.

REFERENCES:
patent: 5042949 (1991-08-01), Greenberg et al.
patent: 5291269 (1994-03-01), Ledger
patent: 5337150 (1994-08-01), Mumola
patent: 5365340 (1994-11-01), Ledger

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