Method and apparatus for measuring dimension using electron...

Image analysis – Pattern recognition – Feature extraction

Reexamination Certificate

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C382S108000, C382S141000, C382S218000, C250S311000

Reexamination Certificate

active

07460714

ABSTRACT:
Disclosed is a scanning electron microscope (SEM) for realizing high-precision dimension measurement of a sample, such as an ArF exposure photoresist, that requires the measurement of a dimension by a low S/N signal waveform. To this end, partial waveforms (or partial images) of sample signal waveforms (or an images) acquired from a dimension measurement target sample and a sample material of the same kind are registered in advance, a measurement target signal waveform (or an image) obtained from the dimension measurement target sample and the sample registration waveform are combined, and a dimension of the dimension measurement target pattern is calculated based on the combination result.

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A Simulation Study of Repeatability and Bias in the CD-SEM; J.S. Villarrubia et al; National Institute of Standards and Technology; pp. 138-149.
Askary, Farid and Sullivan, Neal T.,Redefining Critical in Critical Dimension Metrology, Metrology, Inspection, and Process Control for Microlithography XV, Proceedings of SPIE, vol. 4344 (2001).

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