Method and apparatus for measuring a gap distance between a mask

Metal working – Method of mechanical manufacture – Assembling or joining

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29578, 324 61R, H01L 2166, H01L 2168

Patent

active

043970788

ABSTRACT:
On a mask to be used in fabrication of semiconductor integrated circuits is formed an electrode outside of an integrated circuit pattern area with the same material as said pattern area in the same thickness as said pattern area, this mask is positioned above a wafer as separated therefrom at a minute gap distance, and the gap distance between the mask and the wafer is measured by detecting an electrostatic capacitance between the electrode and the wafer.

REFERENCES:
patent: 3815020 (1974-06-01), Mayer
patent: 3843924 (1974-10-01), Wahlgren
Colclaser: "Microelectronics: Processing and Device Design"-John Wiley, pp. 41-43-1982.

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