Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Patent
1990-11-14
1991-09-10
Cuchlinski, Jr., William A.
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
324158D, 324158T, 374 4, G01R 3126
Patent
active
050477137
ABSTRACT:
A semiconductor specimen is held by a stage which is equipped with a heater (and a cooler) to change the temperature of the specimen in a predetermined range. Minority carriers are generated in the specimen by irradiating it with an energy beam such as a laser beam. A signal reflecting the recombination process of minority carriers is detected in a non-contact manner by a combination of microwave oscillator and a microwave detector through the microwave impedance coupling with the specimen. Decay curves are obtained at a plurality of temperatures in the predetermined range. A deep impurity level in the specimen is determined by performing an Arrhenius' plot on the basis of the plurality of signal decay curves and the corresponding specimen temperatures.
REFERENCES:
patent: 3605015 (1971-09-01), Copeland, III
patent: 4437060 (1984-03-01), Ferenczi et al.
patent: 4551674 (1985-11-01), Miller
patent: 4581578 (1986-04-01), Honma et al.
patent: 4704576 (1987-11-01), Tributsch et al.
patent: 4755748 (1988-07-01), Lin
patent: 4839588 (1989-06-01), Jantsch et al.
patent: 4875004 (1989-10-01), Boyd
patent: 4949034 (1990-08-01), Imura et al.
D. V. Lang, "Deep Level Transient Spectroscopy: A New Method to Characterize Traps in Semiconductors," Journal of Applied Physics, vol. 45, No. 7, Jul. 1974, pp. 3023-3032.
Jacobs et al., "Microwave Techniques in Measurement of Lifetime in Germanium," Journal of Applied Physics, vol. 30, No. 7, Jul. 1959, pp. 1054-1060.
Methods of Measurement for Semiconductor Materials, Process Controls and Devices, Quaterly, 04.01 to 06.30.69.
Kirino Yoshio
Kusama Tateo
Bennett G. Bradley
Cuchlinski Jr. William A.
Semitex Co., Ltd.
Toshiba Ceramics Co. Ltd.
LandOfFree
Method and apparatus for measuring a deep impurity level of a se does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for measuring a deep impurity level of a se, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for measuring a deep impurity level of a se will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-542567