Method and apparatus for mask to wafer gap control in X-ray lith

Details Method and apparatus for mask to wafer gap control in X-ray lith Method and apparatus for mask to wafer gap control in X-ray lith

1977-06-17

1978-10-24

Smith, Alfred E.

Radiant energy

Means to align or position an object relative to a source or...

250492A, G03B 4116, G03B 2702

Patent

active

041223357

ABSTRACT:
The specification describes a process and apparatus for aligning a mask and semiconductor wafer during X-ray lithography which comprises, among other things, inserting a novel flexible spacer between the mask and wafer so as to maintain a vacuum seal between the mask and wafer. This spacer has a plurality of selectively spaced studs with flat surfaces adapted to receive the mask and wafer in intimate contact and conform to surface variations thereon. This spacer serves to maintain a substantially constant distance between mask and wafer over the entire facing surfaces of these two members during an X-ray lithographic process. A sealing member is disposed at the periphery of the flexible spacer and is also in intimate contact with the mask and wafer so as to maintain a vacuum seal between the mask and wafer. The facing surfaces of the mask and wafer will be forced against the studs on the spacer by atmospheric pressure so long as a vacuum is maintained in the sealed space between the mask and wafer.

REFERENCES:
patent: 3743842 (1973-07-01), Smith et al.
patent: 4085329 (1978-04-01), McCoy et al.
McCoy et al, "Mask Alignment for the Fabrication of Integrated Circuits Using X-Ray Lithography," Solid State Technology, Sep. 1976, pp. 59-64.

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