Coating apparatus – Gas or vapor deposition – Multizone chamber
Patent
1994-10-12
1995-08-29
Bueker, Richard
Coating apparatus
Gas or vapor deposition
Multizone chamber
118725, 118729, C23C 1600
Patent
active
054456762
ABSTRACT:
A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.
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J. Appl. Phys., vol. 63, No. 8, 15 Apr. 1988, R60, R99-104.
Roozeboom et al., J. Vac. Sci. Technol. B8 (6), Nov./Dec. 1990, pp. 1249-1258.
Bueker Richard
F.T.L. Co., Ltd.
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