Data processing: generic control systems or specific application – Specific application – apparatus or process – Product assembly or manufacturing
Reexamination Certificate
2005-10-06
2008-08-19
Bahta, Kidest (Department: 2123)
Data processing: generic control systems or specific application
Specific application, apparatus or process
Product assembly or manufacturing
C438S202000
Reexamination Certificate
active
07415318
ABSTRACT:
Concerning a plurality of wafers which compose one lot, amounts of misalignment between alignment marks of these wafers and alignment patterns transferred on photoresists are measured in advance, and then, a mutual relation between a thickness of an interlayer dielectric film and a value of Wafer Scaling is calculated. When exposure is actually executed, first, an interlayer dielectric film is formed on the alignment marks in a lot and planarized. After that, the thickness of the interlayer dielectric film after planarization is measured. The value of the Wafer Scaling is estimated from an average value of the thicknesses of the interlayer dielectric films in the lot and the above-mentioned mutual relation. Then, photoresists are coated on the interlayer dielectric films in the lot, and the photoresists are exposed while the correction is executed so as to compensate the value of the Wafer Scaling.
REFERENCES:
patent: 5969428 (1999-10-01), Nomura et al.
patent: 6259525 (2001-07-01), David
patent: 6383888 (2002-05-01), Stirton
patent: 6410401 (2002-06-01), Ohtaka
patent: 6537835 (2003-03-01), Adachi et al.
patent: 6703328 (2004-03-01), Tanaka et al.
patent: 6768324 (2004-07-01), Yamada et al.
patent: 2001/0026368 (2001-10-01), Mikami
patent: 2002/0072195 (2002-06-01), Anma et al.
patent: 2002/0158193 (2002-10-01), Sezginer et al.
patent: 2004/0002171 (2004-01-01), Gotkis et al.
patent: H06-301196 (1994-10-01), None
patent: 7-167614 (1995-07-01), None
patent: H09-326349 (1997-12-01), None
patent: H10-208994 (1998-08-01), None
Pei et al., In-Situ Thin Film Thickness Measurement Using Ultrasonics Waves, Center for Integrated System, Sanford University, Stanford, CA 94305, 1994, p. 1-4.
Terada et al.; Thickness and compostion Measurement for thin film with combined X-ray Technique, IEEE/SEMI Advnced Semiconductor Manufacruring Conf., 1999, p. 414-419.
Bahta Kidest
Spansion LLC
Westerman, Hattori, Daniels & Adrian , LLP.
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