Electric lamp and discharge devices: systems – Plural power supplies – Plural cathode and/or anode load device
Reexamination Certificate
1999-06-09
2003-03-18
Vu, David (Department: 2821)
Electric lamp and discharge devices: systems
Plural power supplies
Plural cathode and/or anode load device
C345S074100
Reexamination Certificate
active
06534924
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an electron source and an image forming apparatus as an application of the electron source.
2. Description of the Related Art
Conventionally, two types of devices, namely hot and cold cathode devices, are known as electron-emitting devices. Known examples of the cold cathode devices are field emission type electron-emitting devices (to be referred to as FE type electron-emitting devices hereinafter), metal/insulator/metal type electron-emitting devices (to be referred to as MIM type electron-emitting devices hereinafter), and surface-conduction emission (SCE) type electron-emitting devices.
Known examples of the FE type electron-emitting devices are described in W. P. Dyke and W. W. Dolan, “Field emission”, Advance in Electron Physics, 8, 89 (1956) and C. A. Spindt, “Physical properties of thin-film field emission cathodes with molybdenium cones”, J. Appl. Phys., 47, 5248 (1976).
A known example of the MIM type electron-emitting devices is described in C. A. Mead, “Operation of Tunnel-Emission Devices”, J. Appl. Phys., 32,646 (1961).
A known example of the surface-conduction emission type electron-emitting devices is described in, e.g., to Elinson, “Radio Eng. Electron Phys., 10, 1290 (1965) and other examples will be described later.
The surface-conduction emission type electron-emitting device utilizes the phenomenon that electrons are a emitted from a small-area thin film formed on a substrate by flowing a current parallel through the film surface. The surface-conduction emission type electron-emitting device includes electron-emitting devices using an Au thin film [G. Dittmer, “Thin Solid Films”, 9,317 (1972)], an In
2
O
3
/SnO
2
thin film [M. Hartwell and C. G. Fonstad, “IEEE Trans. ED Conf.”, 519 (1975)), a carbon thin film [Hisashi Araki et al., “Vacuum”, Vol. 26, No. 1, p. 22 (1983)], and the like, in addition to an SnO
2
thin film according to Elinson mentioned above.
FIG. 36
is a plan view showing the device by M. Hartwell et al. described above as a typical example of the device structures of these surface-conduction emission type electron-emitting devices. Referring to
FIG. 36
, reference numeral
3001
denotes a substrate; and
3004
, a conductive thin film made of a metal oxide formed by sputtering. This conductive thinfilm
3004
has anH-shaped pattern, as shown in FIG.
36
. Anelectron-emittingportion
3005
is formed by performing electrification processing (referred to as forming processing to be described later) with respect to the conductivethin film
3004
. An interval L in
FIG. 36
is set to 0.5 to 1 mm, and a width W is set to 0.1 mm. The electron-emitting portion
3005
is shown in a rectangular shape at the center of the conductive thin film
3004
for the sake of illustrative convenience. However, this does not exactly show the actual position and shape of the electron-emitting portion.
In the above surface-conduction emission type electron-emitting devices by M. Hartwell et al. and the like, typically the electron-emitting portion
3005
is formed by performing electrification processing called forming processing for the conductive thin film
3004
before electron emission. In the forming processing, for example, a constant DC voltage or a DC voltage which increases at a very low rate of, e.g., 1 V/min is applied across the two ends of the conductive thin film
3004
to partially destroy or deform the conductive thin film
3004
, thereby forming the electron-emitting portion
3005
with an electrically high resistance. Note that the destroyed or deformed part of the conductive thin film
3004
has a fissure. Upon application of an appropriate voltage to the conductive thin film
3004
after the forming processing, electrons are emitted near the fissure.
The above surface-conduction emission type electron-emitting devices are advantageous because they have a simple structure and can be easily manufactured. For this reason, many devices can be formed on a wide area. As disclosed in Japanese Patent Laid-Open No. 64-31332 filed by the present applicant, a method of arranging and driving a lot of devices has been studied.
Regarding applications of surface-conduction emission type electron-emitting devices to, e.g., image forming apparatuses such as an image display apparatus and an image recording apparatus, electron-beam sources, and the like have been studied.
As an application to image display apparatuses, in particular, as disclosed in the U.S. Pat. No. 5,066,883 and Japanese Patent Laid-Open No. 2-257551 filed by the present applicant, an image display apparatus using the combination of an surface-conduction emission type electron-emitting device and a fluorescent substance which emits light upon reception of an electron beam has been studied. This type of image display apparatus using the combination of the surface-conduction emission type electron-emitting device and the fluorescent substance is expected to have more excellent characteristics than other conventional image display apparatuses. For example, in comparison with recent popular liquid crystal display apparatuses, the above display apparatus is superior in that it does not require a backlight because it is of a self-emission type and that it has a wide view angle.
Other prior arts are disclosed in Japanese Patent Laid-Open Nos. 7-176265 and 8-248920. The prior art also includes Japanese Patent Laid-Open No. 9-134666.
SUMMARY OF THE INVENTION
It is an object of the present invention to realize a more preferable electron source manufacturing method, image forming apparatus manufacturing method, or electron source manufacturing apparatus.
According to the present invention, an electron source manufacturing method is characterized by comprising the step of applying a potential to first portions of a plurality of conductive members serving as at least part of electron-emitting devices via a wiring commonly connected to the plurality of conductive members, and applying a potential to second portions of the plurality of conductive members, thereby applying a voltage to the plurality of conductive members, wherein the potential applied to the second portions of the plurality of conductive members is set to relax a difference in voltage applied to the plurality of conductive members owing to a difference between potentials at portions respectively connected to the first portions of the plurality of conductive members in the wiring commonly connected to the plurality of conductive members.
Other features and advantages of the present invention will be apparent from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate the same or similar parts throughout the figures thereof.
REFERENCES:
patent: 5066883 (1991-11-01), Yoshioka et al.
patent: 5734361 (1998-03-01), Suzuki et al.
patent: 5975012 (1999-11-01), Hayashi et al.
patent: 0 620 581 (1994-10-01), None
patent: 0 726 591 (1996-08-01), None
patent: 0 729 168 (1996-08-01), None
patent: 0 785 564 (1997-07-01), None
patent: 0 803 892 (1997-10-01), None
patent: 64-31332 (1989-02-01), None
patent: 02-257551 (1990-10-01), None
patent: 07-176265 (1995-07-01), None
patent: 8-190852 (1996-07-01), None
patent: 08-248920 (1996-09-01), None
patent: 09-134666 (1997-05-01), None
patent: 09161664 (1997-06-01), None
patent: 9-199006 (1997-07-01), None
patent: 11-120902 (1999-04-01), None
European Search Report (No. 2663830) dated Sep. 16, 1999.
C. A. Mead, “Operation of Tunnel-Emission Devices,” Journal of Applied Physics, vol. 32, No. 4, pp. 646-652, Apr., 1961.
M. I. Elinson, et al. “The Emission of Hot Electrons and The Field Emission of Electrons From Tin Oxide,” Radio Engineering and Electronic Physics, pp. 1290-1296, Jul., 1965.
M. Hartwell, et al., “Strong Electron Emission From Patterned Tin-Indium Oxide Thin Films,” International Electron Devices Meeting, pp. 519-521, 1975.
Hisashi Araki, et al., “Electroforming and Electron Emission of Carbon Thin Films,” Journal of
Kuno Mitsutoshi
Oguchi Takahiro
Suzuki Noritake
Canon Kabushiki Kaisha
Vu David
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