Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1995-07-24
1998-06-16
Dang, Thi
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438906, H01L 2100
Patent
active
057667853
ABSTRACT:
To react the surfaces of a plurality of semiconductor substrates to be treated to reducing gas in a treating chamber, their corresponding members having surfaces opposite to those surfaces of the substrates on which semiconductor devices are to be manufactured, are arranged. The amount of reducing agent supplied to the surfaces of the substrates is controlled by controlling the reaction of the surfaces of the members to the reducing gas, and the progress of the reducing reaction to each of the substrates is controlled accordingly.
REFERENCES:
patent: 4340456 (1982-07-01), Robinson et al.
patent: 5015330 (1991-05-01), Okumura et al.
Mikata Yuuichi
Nakao Takashi
Tsunashima Yoshitaka
Dang Thi
Kabushiki Kaisha Toshiba
LandOfFree
Method and apparatus for manufacturing a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method and apparatus for manufacturing a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus for manufacturing a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1723350