Method and apparatus for manufacturing a semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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438906, H01L 2100

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active

057667853

ABSTRACT:
To react the surfaces of a plurality of semiconductor substrates to be treated to reducing gas in a treating chamber, their corresponding members having surfaces opposite to those surfaces of the substrates on which semiconductor devices are to be manufactured, are arranged. The amount of reducing agent supplied to the surfaces of the substrates is controlled by controlling the reaction of the surfaces of the members to the reducing gas, and the progress of the reducing reaction to each of the substrates is controlled accordingly.

REFERENCES:
patent: 4340456 (1982-07-01), Robinson et al.
patent: 5015330 (1991-05-01), Okumura et al.

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