Method and apparatus for manufacturing a semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

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438714, 438718, 438906, 216 62, 216 67, 216 79, 134 12, 134 13, 134 21, 134 31, H01L 2100

Patent

active

058800328

ABSTRACT:
A method of manufacturing a semiconductor device comprises the steps of introducing a first gas containing steam or alcohol into a processing vessel housing a semiconductor substrate, and introducing a hydrogen fluoride gas as a second gas into the processing vessel after stopping introduction of the first gas into the process chamber.

REFERENCES:
patent: 4857142 (1989-08-01), Syverson
patent: 5167761 (1992-12-01), Westendorp et al.
patent: 5169408 (1992-12-01), Biggerstaff et al.
patent: 5173152 (1992-12-01), Tanaka
patent: 5500081 (1996-03-01), Bergman
patent: 5567332 (1996-10-01), Mehta
patent: 5620559 (1997-04-01), Kikuchi

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