Method and apparatus for manufacturing a semiconductor...

Details Method and apparatus for manufacturing a semiconductor... Method and apparatus for manufacturing a semiconductor...

2006-09-05

2009-11-24

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S711000, C438S723000, C438S724000, C438S756000, C438S757000, C257SE21218

Reexamination Certificate

active

07622393

ABSTRACT:
A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride film in a substrate to be processed. The plasma etching process uses an etching gas including a CmFngas (m, n represent integers of 1 or greater) added to a gaseous mixture of a CHxFygas (x, y represent integers of 1 or greater) and O2gas, wherein the flow rate of the CmFngas is not greater than 10% of that of the O2gas. The etching gas may further include a rare gas.

REFERENCES:
patent: 7049244 (2006-05-01), Becker et al.
patent: 2005/0277289 (2005-12-01), Wagganer et al.
patent: 2003-229418 (2003-08-01), None
patent: 2004-071732 (2004-03-01), None

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