Metal working – Method of mechanical manufacture – Electrical device making
Patent
1983-12-23
1985-10-08
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Electrical device making
148174, 148DIG19, 148DIG158, 148DIG22, H01L 2128
Patent
active
045451150
ABSTRACT:
Disclosed is a method of making ohmic and/or Schottky barrier contacts to a silicon semiconductor substrate in which before depositing the metal on silicon semiconductor substrates containing integrated circuits which are covered by a mask having contact windows, the metal is initially deposited on freshly cleaned blank silicon semiconductor substrates mounted in the same vacuum chamber. In this manner any traces of oxygen present in the vacuum chamber are chemisorbed by the blank substrate resulting in deposition of a high quality oxide-free metal contacts on the device substrates.
The disclosed apparatus comprises a deposition chamber maintained at a predetermined low pressure, a substrate holder carrying a plurality of blank silicon substrates and silicon substrates containing integrated circuit structures covered by a mask having contact windows, a source of metal placed in the chamber for evaporation or sputtering and a shutter arranged in close proximity with said substrate holder for shielding selected substrates during the initial stages of metal deposition.
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Bauer Hans J.
Garben Bernd
Auyang Hunter L.
Coca T. Rao
Hearn Brian E.
International Business Machines - Corporation
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