Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-10-29
1993-12-14
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257250, 257315, H01L 2978
Patent
active
052705595
ABSTRACT:
An adjustable CCD gate structure utilizing ultra-violet light activated floating gates, wherein a floating polysilicon gate is used between a CCD electrode and the underlying substrate to provide a fixed voltage bias to the CCD gate during the manufacturing process thereof The floating gate is programmed with a desired voltage bias during the application of ultra-violet light and is thereafter fixed at that adjusted level, upon the removal of the ultra-violet light. Thus, the method of the present invention comprises the steps of providing a CCD gate structure in which there is such a floating polysilicon gate between the CCD electrode and the underlying substrate; applying an ultra-violet light activation to the floating polysilicon gate; applying a voltage to the conventional CCD electrode which is resistively coupled to the floating electrode for adjusting the bias on the floating electrode to a desired level; and then removing the ultra-violet light to fix the voltage bias at the floating polysilicon gate at a permanant level.
REFERENCES:
patent: 4228445 (1980-10-01), Tasch, Jr. et al.
patent: 4559549 (1985-12-01), Roberts et al.
patent: 4612454 (1986-09-01), Kinoshita et al.
patent: 4612522 (1986-09-01), Dyck
patent: 4984045 (1991-01-01), Matsunaga
Agranat Aharon J.
Neugebauer Charles F.
Yariv Amnon
Bowers Courtney A.
California Institute of Technology
James Andrew J.
Tachner Leonard
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